oxygen precipitation in Chinese
Translation
Mobile
- 氧沉淀
- "oxygen" in Chinese : n. 【化學(xué)】氧，氧氣。
- "precipitation" in Chinese : n. 1.猛然摔下，落下。 2.猛沖；急躁，輕率，魯莽。 ...
- "precipitation of oxygen" in Chinese : 氧氣析出
- "amount of oxygen precipitation" in Chinese : 析出氧氣量
- "precipitation" in Chinese : n. 1.猛然摔下，落下。 2.猛沖；急躁，輕率，魯莽。 3.【化學(xué)】沉淀( ...
- "precipitation precipitation" in Chinese : 陡然下降
- "oxygen" in Chinese : n. 【化學(xué)】氧，氧氣。
- "absorption precipitation" in Chinese : 吸附沉淀
- "abundant precipitation" in Chinese : 豐量; 過(guò)冷降水
- "accumulated precipitation" in Chinese : 累積降水量
- "accumulation precipitation" in Chinese : 累積降水量
- "acid precipitation" in Chinese : 酸沉降; 酸性降水; 酸雨
- "adsorption precipitation" in Chinese : 吸附沉淀
- "adsorptive precipitation" in Chinese : 吸附沉淀
- "affinity precipitation" in Chinese : 親和沉淀; 親和分配
Examples
- Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon
鍺對(duì)重?fù)脚鹬崩柚醒醭恋淼挠绊?i class="labawb" onClick="playMp3('sound_c_1')"> - Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
硅片氧沉淀特性的測(cè)定-間隙氧含量減少法 - Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
通過(guò)測(cè)量間隙氧含量的減少表征硅片氧沉淀特性的方法 - Finally , the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper
最后文章還系統(tǒng)研究了快速熱處理( rtp )對(duì)重?fù)脚鸸鑶尉е醒醭恋淼挠绊憽? - Fumio shimura , et al . carbon enhancement effect on oxygen precipitation in czochralski silicon [ j ] . j appl phys , 1986 , 59 : 3251
劉培東,朱愛(ài)平,張錦心等.碳和氮原子在氧沉淀中的作用[ j ] .半導(dǎo)體學(xué)報(bào), 1999 , 20 : 107 - The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures
重?fù)缴楣鑶尉г谥懈邷赝嘶饡r(shí)形成密度較高的氧沉淀及誘生缺陷。 - The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi , while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )
普通直拉硅氧沉淀在低溫750形核，重?fù)絘s硅單晶形核溫度較高，在750 - 900之間。 - Both the size and density of oxygen precipitation increase with the annealing time , and the size of oxygen precipitation decrease with the increase of the annealing temperature
隨著退火時(shí)間的延長(zhǎng)氧沉淀尺寸增大，密度略有增加；隨著退火溫度的升高，氧沉淀尺寸相對(duì)減小。 - A modified ig process was suggested , through which a wider denuded - zone ( dz ) on the surface of wafers and higher density of oxygen precipitation in silicon bulk were obtained
使用改進(jìn)的內(nèi)吸除工藝，在重?fù)缴楣杵砻嫘纬闪溯^寬的清潔區(qū)，體內(nèi)形成了較高密度的氧沉淀和誘生缺陷。 - Tem showed that the faults and dislocation loops introduced by the oxygen precipitation were formed when the wafers were annealed at moderate temperature , and polyhedral oxygen precipitation was generated at high temperature
對(duì)氧沉淀形態(tài)及誘生缺陷進(jìn)行了tem測(cè)試分析，結(jié)果表明，在中溫退火時(shí)出現(xiàn)氧沉淀引起的層錯(cuò)和位錯(cuò)環(huán)；在高溫退火后生成了多面體形狀的氧沉淀。
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Related
"isoelectric precipitation" in Chinese, "primary oxygen" in Chinese, "oxygen tube" in Chinese, "oxygen orifice" in Chinese, "oxygen vacancy" in Chinese, "oxygen concentrator" in Chinese, "fossil oxygen" in Chinese, "oxygen bends" in Chinese, "emergency oxygen" in Chinese, "oxygen poor stratum" in Chinese, "oxygen potential" in Chinese, "oxygen powder lance" in Chinese, "oxygen pre ure gauge" in Chinese, "oxygen pre ure reducer" in Chinese, "oxygen pressure" in Chinese, "oxygen pressure gauge" in Chinese, "oxygen pressure indicator" in Chinese, "oxygen pressure meter" in Chinese,
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